Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer

Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer

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Two-dimensional antiferromagnetic semiconductors have triggered significant attention due to their unique physical properties and broad application.Based on first-principles calculations, a novel two-dimensional (2D) antiferromagnetic material MnSi2N4 monolayer is predicted.The calculation results show that the two-dimensional MnSi2N4 prefers Drying Rack an antiferromagnetic state with a small band gap of 0.

26 eV.MnSi2N4 has strong antiferromagnetic coupling which can be effectively tuned under strain.Interestingly, the MnSi2N4 monolayer exhibits a half-metallic ferromagnetic properties under an external magnetic field, in which the spin-up electronic state displays a metallic property, while the spin-down electronic state exhibits a semiconducting characteristic.

Therefore, 100% spin polarization can be achieved.Two-dimensional MnSi2N4 monolayer has potential application in the field of high-density information storage and Kitchen Linen spintronic devices.